Hybrid Quantum Dot-2D Electron Gas Devices for Coherent Optoelectronics

摘要

We present an inverted GaAs 2D electron gas with self-assembled InAs quantumdots in close proximity, with the goal of combining quantum transport withquantum optics experiments. We have grown and characterized several wafers --using transport, AFM and optics -- finding narrow-linewidth optical dots andhigh-mobility, single subband 2D gases. Despite being buried 500 nm below thesurface, the dots are clearly visible on AFM scans, allowing preciselocalization and paving the way towards a hybrid quantum system integratingoptical dots with surface gate-defined nanostructures in the 2D gas.